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City of London Polytechnic
On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
Abstract
dc:description.abstractSi and Sn doped GaAs epilayers were grown with electron concentrations from 8x10[to the power of 14] cm[to the power of -3] (u77=28x10[to the power of 3] cm[to the power of 2]/V-8) up to a peak of 1.16x10[to the power of 19] cm[to the power of-3] (using Sn).
Degree
thesis:*- Name dc:type.qualificationname
- phd
- Level dc:type.qualificationlevel
- doctoral
- Grantor dc:publisher.institution
- City of London Polytechnic
- Year dc:date.issued
- 1987
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Newstead, Simon Marc
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Dc Identifier Grantnumber
- N/A
- OAI identifier oai:identifier
- oai:repository.londonmet.ac.uk:3065