Back to search

University of Cambridge

Development of zincblende GaN grown on 3C-SiC/Si substrates for LED applications

dc:creator Gundimeda, Abhiram

dc:type.qualificationname Doctor of Philosophy (PhD)

dc:date.issued2023

Abstract

dc:description.abstract

[Restricted]

Degree

thesis:*

Name dc:type.qualificationname: Doctor of Philosophy (PhD)
Level dc:type.qualificationlevel: Doctoral
Grantor dc:publisher.institution: University of Cambridge
Year dc:date.issued: 2023

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Gundimeda, Abhiram
Advisor dc:contributor.advisor: Oliver, Rachel

Subjects

dc:subject × 5

Rights

dc:rights

Licence: https://apollo8-f-pro.lib.cam.ac.uk/bitstreams/a892b88a-84cd-4a24-aead-f98d06f325b2/download

https://www.rioxx.net/licenses/all-rights-reserved/
Language dc:language: eng

Identifiers

dc:identifier.*

Author Identifier: 0000-0001-5208-1920
OAI identifier oai:identifier: oai:www.repository.cam.ac.uk:1810/359950

Chain of custody

source

Harvested from: Cambridge University
Base URL: api.repository.cam.ac.uk/server/oai/request
Last updated: 2026-07-22
Source record: OAI-PMH GetRecord

related terms

citation

Gundimeda, Abhiram. Development of zincblende GaN grown on 3C-SiC/Si substrates for LED applications. Doctoral thesis, University of Cambridge, 2023. https://doi.org/10.17863/CAM.103263

More from Cambridge University