Electronic properties of my-Si : H layers investigated with Hall measurements

Examination of the electronic properties of thin films of microcrystalline silicon. Temperature-dependent determination of the mobility and carrier concentration of the electrons in layers with different doping levels and crystallinity. Proposal of a model of potential barries with a height distribution in order to explain the results.

Grantor dc:publisher

Publikationsserver der RWTH Aachen University

Year dc:date

2007

Author dc:creator

• Bronger, Torsten

Contributors dc:contributor

• Wuttig, Matthias

• info:eu-repo/classification/ddc/530
• Siliciumhalbleiter
• Hall-Beweglichkeit
• Halbleiterschicht
• Elektron
• Temperaturleitfähigkeit
• Physik
• Halleffekt
• Dünnschicht
• Beweglichkeit
• mikrokristallin
• Silizium
• Hall effect
• electron mobility
• microcrystalline
• silicon
• thinfilm

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

eng

Identifier

https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-124117%22

OAI identifier oai:identifier

oai:publications.rwth-aachen.de:62553