Rashba-Effekt in niedrigdimensionalen InGaAs/InP Strukturen

In this thesis the spin-orbit coupling of electrons in low dimensional InGaAs/InP heterostructures, referred to as Rashba Effect, is investigated. It focuses on the basic features of the spin-orbit interaction in quasi one-dimensional structures (quantum wires) with typical widths of 150 to 1000 nm. These quantum wires were prepared by metal-organic vapor phase epitaxy and a newly developed selective wet chemical etching process. Magneto-transport measurements have revealed two important properties of the spin-orbit coupling in such wires. For wider wires the strength of the interaction (coupling constant) could be extracted from transport experiments. It increases as the wire width decreases. By depleting the one- dimensional conductor by means of a gate electrode the Rashba coupling strength could be controlled like in two-dimensional structures. However, for wires smaller than 300 nm it turned out to be impossible to determine the value of the coupling constant by transport measurements. Finally the experimental observations are supplemented and explained by a simulation.

Grantor dc:publisher

Publikationsserver der RWTH Aachen University

Year dc:date

2005

Author dc:creator

• Knobbe, Jens

Contributors dc:contributor

• Lüth, Hans

• info:eu-repo/classification/ddc/530
• Drei-Fünf-Halbleiter
• Ternäres System
• Quantendraht
• Elektron
• Spin-Bahn-Wechselwirkung
• Physik
• Rashba-Effekt
• Halbleiter-Heterostrukturen
• Quantendrähte

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

ger

Identifier

https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-121542%22

OAI identifier oai:identifier

oai:publications.rwth-aachen.de:59788