Scaling effects in lateral size and thickness of SrBi 2 Ta 2 O 9 thin films for integration into ferroelectric random access memory devices

Mört, Manfred

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Shaker

Scaling effects in lateral size and thickness of SrBi 2 Ta 2 O 9 thin films for integration into ferroelectric random access memory devices

dc:creator Mört, Manfred

dc:date2005

Degree

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Grantor dc:publisher: Shaker
Year dc:date: 2005

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Mört, Manfred
Contributors dc:contributor: Waser, Rainer

Rights

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Statement dc:rights: info:eu-repo/semantics/closedAccess
Language dc:language: eng

Identifiers

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Identifier: https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-121510%22
OAI identifier oai:identifier: oai:publications.rwth-aachen.de:59751

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Harvested from: RWTH Aachen University
Base URL: publications.rwth-aachen.de/oai2d
Last updated: 2026-07-30
Source record: OAI-PMH GetRecord

related terms

aachen
2005

citation

Mört, Manfred. Scaling effects in lateral size and thickness of SrBi 2 Ta 2 O 9 thin films for integration into ferroelectric random access memory devices. Shaker, 2005. https://publications.rwth-aachen.de/record/59751